Growth of device-quality GaAs layer directly on (0 0 1) Ge substrates by both solid-source and gas-source MBE

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 104-107

  Li, W ^a   Laaksonen, S ^a   Haapamaa, J ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

A1. Defects; A3. Molecular beam epitaxy; B2. Semiconducting materials

Indexed keywords

CRYSTAL DEFECTS; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035399283     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00641-8     Document Type: Conference Paper

References (8)