Quality-enhanced GaAs layers grown on Ge/Si substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 179, Issue 3-4, 1997, Pages 427-432

  Kim, K S ^a   Kim, J H ^a   Lim, D H ^a   Yang, G M ^a   Kim, J Y ^a   Lee, H J ^a  

^a Chonbuk National University   (South Korea)

Author keywords

GaAs; Ge; Heteroepitaxy; Si; Strained layer superlattice

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; POTASSIUM COMPOUNDS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

INDIUM GALLIUM ARSENIDE; POTASSIUM HYDROXIDE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031208025     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00135-8     Document Type: Article

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