Temperature dependence of substrate and drain-currents in bulk FinFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 5, 2007, Pages 1259-1264

  Kim, Sang Yun ^a,b   Kim, Young Min ^a   Baek, Kwang Ho ^a,c   Choi, Byung Kil ^a   Han, Kyoung Rok ^a   Park, Ki Heung ^a   Lee, Jong Ho ^a  

^a Kyungpook National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

Bulk FinFET; Drain current; Fin width; Stress; Substrate current; Temperature; Threshold voltage

Indexed keywords

DRAIN CURRENT; ELECTRON MOBILITY; ENERGY GAP; SUBSTRATES; TENSILE STRESS; THERMAL EFFECTS; THRESHOLD VOLTAGE;

BANDGAP NARROWING; FIN WIDTH; TEMPERATURE DEPENDENCE;

FIELD EFFECT TRANSISTORS;

EID: 34247853242     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.894605     Document Type: Article

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