Impact ionization rate of the bulk FinFETs with fin width and bias conditions

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 408-409

  Kim, Sang Yun ^a   Back, Kwang Ho ^a   Han, Kyoung Rok ^a   Choi, Byung Kil ^a   Lee, Jong Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33847206445     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. T. Park et al., IEDM Tech. Dig., p.27, 2003.
2. S.-Y. Kim et al., IEEE EDL., vol.26(8), p.566, 2005.
3. T. Park et al., IEEE EDL., vol. 23(5), p. 798, 2004.
4. J.-H. Lee et al., Si Nanoelectronics, p. 102, 2003.
5. H. -J. Lee et al., IEEE EDL, vol. 26(5), p.326, 2005.
6. Abhisek Dixit et al., IEEE TED., vol.52(6), p. 1132, 2005.