Experimental Evidence of Grain-Boundary Related Hot-Carrier Degradation Mechanism in Low-Temperature Poly-Si Thin-Film-Transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 219-222

  Yoshida, T ^a   Yoshino, K ^b   Takei, M ^b   Hara, A ^b   Sasaki, N ^b   Tsuchiya, T ^a  

^a SHIMANE UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTALLIZATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXCIMER LASERS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; HOT CARRIERS; POLYSILICON; PYROLYSIS;

EXCIMER LASER CRYSTALLIZATION (ELC); GLASS SUBSTRATES; PLASTIC SUBSTRATES;

THIN FILM TRANSISTORS;

EID: 0842309820     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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6. Y. Uraoka, T. Hatayama, T. Fuyuki, T. Kawamura, and Y. Tsuchihashi, "Reliability of Low Temperature Poly-Silicon TFTs Under Inverter Operation," IEEE Trans. Electron Devices, vol. 48, no. 10, pp. 2370-2374, 2001.
7. N.A. Hastas, C.A. Dimitriadis, J. Brini, and G. Kamarinos, "Hot-Carrier-Induced Degradation in Short p-Channel Nonhydrogenated Polysilicon Thin-Film Transistors," IEEE Trans. Electron Devices, vol. 49, no.9, pp. 1552-1557, 2002.