Bias and temperature dependent hot-carrier characteristics of sub-100 nm partially depleted SOI MOSFETs

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 113-115

  Zhao, Eugene Xuejun ^a   Chan, Jay ^a   Zhang, John ^a   Marathe, Amit ^a   Taylor, Kurt ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

Hot carrier; Hot carrier injection (HCI); Silicon on insulator (SOI); Temperature effects

Indexed keywords

ACTIVATION ENERGY; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE;

HOT CARRIER BEHAVIOR; HOT CARRIER INJECTION; HOT-CARRIERS; PARTIALLY DEPLETED SILICON-ON-INSULATOR; SILICON ON INSULATOR; SILICON-ON-INSULATOR MOSFETS; SUB-100 NM; TEMPERATURE DEPENDENT;

HOT CARRIERS;

EID: 84866610397     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194245     Document Type: Conference Paper

References (4)

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3. W. Wang, etc IEEE Intl Integrated Reliability Workshop Final Report, 1999, Page(s) 66-68
4. D. Wouters, IEEE Trans. ED, ppl 746-50, 1989