HfO2/HfSixOy high-K gate stack with very low leakage current for low-power poly-Si gated CMOS application

Electronics Letters

Volumn 39, Issue 8, 2003, Pages 692-694

  Yang, C W ^a   Fang, Y K ^a   Chen, S F ^a   Wang, M F ^b   Hou, T H ^b   Lin, Y M ^b   Yao, L G ^b   Chen, S C ^b   Liang, M S ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MOSFET DEVICES; SILICA; TRANSCONDUCTANCE;

MAGNITUDE REDUCTION;

CMOS INTEGRATED CIRCUITS;

EID: 0038004117     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030445     Document Type: Article

References (6)

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2. 2 gate dielectric', IEDM Tech. Dig., 2001, pp. 663-666
3. WILK, G.D., and WALLANCE, R.M.: 'Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon', Appl. Phys. Lett., 1999, 74, pp. 2854-2856
4. YAMAGUCHI, T., SATAKE, H., and FUKUSHIMA, N.: 'Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET', IEDM Tech. Dig., 2001, pp. 663-666
5. FISCHETTI, M.V., NEUMAYER, D.A., and CARTIER, E.A.: 'Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: the role of remote phonon scattering', J. Appl. Phys., 2001, 90, pp. 4587-4608
6. SZE, S.M. (Ed.): 'Physics of semiconductor devices' (John Wiley & Sons, New York, 1985, 2nd edn.), p. 447