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Volumn 28, Issue 5, 2007, Pages 340-342

A 0.2-W heterostructure barrier varactor frequency tripler at 113 GHz

Author keywords

Frequency multiplier; Heterostructure barrier varactor (HBV); High power operation; Millimeter wave devices; Semiconductor diodes; Terahertz source; Thermal management

Indexed keywords

FLIP CHIP DEVICES; FREQUENCY TRIPLERS; MICROSTRIP DEVICES; MILLIMETER WAVE DEVICES; SEMICONDUCTOR DIODES; TEMPERATURE CONTROL; VARACTORS;

EID: 34247602136     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895376     Document Type: Article
Times cited : (34)

References (15)
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  • 3
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    • Rahal, A.1    Bosisio, R.G.2    Rogers, C.3    Ovey, J.4    Sawan, M.5    Missous, M.6
  • 10
    • 0033077560 scopus 로고    scopus 로고
    • Heterostructure barrier varactors on copper substrate
    • Feb. 18
    • L. Dillner, J. Stake, and E. L. Kollberg, "Heterostructure barrier varactors on copper substrate," Electron. Lett., vol. 35, no. 4, pp. 339-341, Feb. 18, 1999.
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  • 11
    • 0031125832 scopus 로고    scopus 로고
    • Planar multi-barrier 80/240-GHz heterostructure barrier varactor triplers
    • Apr
    • J. R. Jones, W. L. Bishop, S. H. Jones, and G. B. Tait, "Planar multi-barrier 80/240-GHz heterostructure barrier varactor triplers," IEEE Trans. Microw. Theory Tech., vol. 45, no. 4, pp. 512-518, Apr. 1997.
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  • 12
    • 14344253131 scopus 로고    scopus 로고
    • 11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler
    • Feb. 3
    • T. Bryllert, A. Olsen, J. Vukusic, T. A. Emadi, M. Ingvarson, J. Stake, and D. Lippens, "11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler," Electron. Lett., vol. 41, no. 3, pp. 131-132, Feb. 3, 2005.
    • (2005) Electron. Lett , vol.41 , Issue.3 , pp. 131-132
    • Bryllert, T.1    Olsen, A.2    Vukusic, J.3    Emadi, T.A.4    Ingvarson, M.5    Stake, J.6    Lippens, D.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.