11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler

Electronics Letters

Volumn 41, Issue 3, 2005, Pages 131-132

  Bryllert, T ^a,b   Olsen, A O ^b   Vukusic, J ^c   Emadi, T Arezoo ^b   Ingvarson, M ^b   Stake, J ^b   Lippens, D ^c  

^a LUND UNIVERSITY   (Sweden)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; HETEROJUNCTIONS; MICROSTRIP DEVICES; PHOTOLITHOGRAPHY; POWER AMPLIFIERS; SCHOTTKY BARRIER DIODES; SUBSTRATES; VARACTORS; WAVEGUIDE COUPLERS;

BARRIER VARACTORS; FREQUENCY SYNTHESISERS; QUINTUPLER; SCHOTTKY MULTIPLIERS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 14344253131     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20057633     Document Type: Article

References (4)

1. Kollberg, E., and Rydberg, A.: 'Quanturn-barrier-varactor diodes for high efficiency millimetre-wave multipliers', Electron. Lett., 1989, 25, (25), pp. 1696-1698
2. Mélique, X., Maestrini, A., Mounaix, P., Favreau, M., Vanbésien, O., Goutoule, J.M., Beaudin, G., Nähri, T., and Lippens, D.: 'Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler', Electron. Lett., 1999, 35, (11), pp. 938-939
3. Xiao, Q., Duan, Y., Hesler, J.L., Crowe, T.W., and Weikle, R.M.: 'A 5 mW and 5% efficiency 210 GHz InP-based heterostructure barrier varactor quintupler', IEEE Microw. Wirel. Compon. Lett., 2004, 4, (14), pp. 159-161
4. Olsen, A.Ø., Ingvarson, M., Alderman, B., and Stake, J.: 'A 100-GHz HBV frequency quintupler using microstrip elements', IEEE Microw. Wirel. Compon. Lett., 2004, 10, (14), pp. 493-495