Two-terminal active devices for terahertz sources

International Journal of High Speed Electronics and Systems

Volumn 13, Issue 2, 2003, Pages 395-427

  Haddad, G I ^a   East, J R ^a   Eisele, H ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Ballistic devices; IMPATTS; Transferred electron devices; TUNNETTS

Indexed keywords

BALLISTIC DEVICES; TRANSFERRED ELECTRON DEVICES; TUNNETTS;

BALLISTICS; COMPUTER SIMULATION; ELECTRIC LOADS; ELECTROMAGNETIC WAVES; FREQUENCIES; IMAGING TECHNIQUES; IMPATT DIODES; OSCILLATORS (ELECTRONIC); POWER ELECTRONICS; RADIO COMMUNICATION; SOLID STATE DEVICES;

ELECTRONIC EQUIPMENT;

EID: 1542789948     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156403001788     Document Type: Article

References (65)

1. L. Esaki, "New phenomenon in narrow germanium p-n junctions," Phys. Rev., 109, 1958, pp. 603-604.
2. nd Ed., Wiley, New York, 1981.
3. L. L. Chang, L. Esaki, and R. Tsu, "Resonant tunneling in semiconductor double-barriers," Appl. Phys. Lett., 24(12), 1974, 593-595.
4. C. Hilsum, "Transferred-electron amplifiers and oscillators," Proc. Inst. Radio Eng., 50, 1962, pp. 185-189.
5. J. B. Gunn, "Microwave oscillation of current in III-V semiconductors," Solid-State Commun., 1, 1963, pp. 88-91.
6. W. T. Read, "A proposed high frequency negative resistance diode," Bell Syst. Tech. J., 37(2), 1958, pp. 401-446.
7. J. Nishizawa, T. Ohmi, and T. Sakai, "Millimeter-wave oscillations from TUNNETT diodes," Proc. European Microwave Conference, Paris, September 1974, pp. 449-453.
8. H. W. Rüegg, "A proposed punch-through negative-resistance diode," IEEE Trans. Electron Devices, 15(8), 1968, pp. 577-585.
9. S. M. Sze, D. J. Coleman Jr., and A. Loya, "Current transport in metal-semiconductor-metal (MSM) structures," Solid-State Electronics, 14(12), 1971, pp. 1209-1218.
10. H. Eisele and G. I. Haddad, "Active microwave diodes," Ch. 6 in, Modern Semiconductor Device Physics, S. M. Sze (Ed.), John Wiley, New York, 1998.
11. B. Fank, J. Crowley, and C. Hang, "InP Gunn diode sources," Millimeter Wave Technology III, SPIE 544, 1985, pp. 22-28.
12. M. A. di Forte-Poisson, C. Brylinski, G. Colomer, D. Osselin, S. Hersee, J. P. Duchemin, F. Azan, D. Lechevallier, and J. Lacombe, "High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz," Electron. Lett., 20, 1984, pp. 1061-1062.
13. I. Dale, J. R. P. Stephens, and J. Bird, "Fundamental-mode graded-gap Gunn diode operation at 77 and 84 GHz," Proc. Microwaves 94, London, United Kingdom, October 25-27, 1994, pp. 248-251.
14. A. Paolella, R. L. Ross, and J. Ondria, "Advanced mm-wave sources by automated MBE," Microwave J., 29(4), 1986, pp. 149-159.
15. R. Kamoua, H. Eisele, and G. I. Haddad, "D-band (110-170 GHz) InP Gunn devices," Solid-State Electron., 36, 1993, pp. 1547-1555.
16. H. Eisele and G. I. Haddad, "High-performance InP Gunn devices for fundamental-mode operation in D-band (110-170 GHz)," IEEE Microwave Guided Wave Lett., 5(11), 1995, pp. 385-387.
17. H. Eisele, "Second-harmonic power extraction from InP Gunn devices with more than 1 mW in the 260-320 GHz frequency range," Electron. Lett., 34, 1998, pp. 2412-2413.
18. M. Wollitzer, J. Büchler, F. Schäffler, and J.-F. Luy, "D-band Si IMPATT diodes with 300 mW CW output power at 140 GHz," Electron. Lett., 32, 1996, pp. 122-123.
19. H. Eisele, "Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks," Solid-State Electron., 32(3), 1989, pp. 253-257.
20. H. Eisele and G. I. Haddad, "GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above," IEEE Trans. Microwave Theory Tech., 43(1), 1995, pp. 210-213.
21. H. Eisele, "Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz," Electron. Lett., 34(13), 1998, pp. 1324-1326 and Electron. Lett., 34(15), 1998, pp. 1531.
22. H. Eisele, "Efficient second-harmonic power extraction from GaAs TUNNETT diodes above 200 GHz," Electron. Lett., 34(13), 1998, pp. 1324-1326 and Electron. Lett., 34(15), 1998, pp. 1531.
23. H. Eisele, "Gunn or transferred-electron devices," in Vol. 8, Encyclopedia of Electrical and Electronics Engineering, J. G. Webster (Ed.), John Wiley, New York, 1999, pp. 523-537.
24. K. Chang, "Handbook of Microwave and Optical Components," Vol. 2, John Wiley, New York, 1990.
25. J. E. Carlstrom, R. L. Plambeck, and D. D. Thornton, "A continuously tunable 65-115-GHz Gunn oscillator," IEEE Trans. Microwave Theory Tech., 33(7), 1985, pp. 610-619.
26. A. Rydberg, "High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHz," IEEE Electron Device Lett., 11(10), 1990, pp. 439-441.
27. A. Rydberg, "A contribution to the design of wide-band tunable second-harmonic mode millimeter-wave InP-TED oscillators above 110 GHz," Int. J. Infrared and Millimeter Waves, 11, 1990, pp. 383-404.
28. R. Brown, W. D. Goodhue, T. C. L. G. Sollner, and C. D. Parker, "Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary-state tunneling theory," J. Appl. Phys., 64(3), 1988, pp. 1519-1529.
29. R. K. Mains and G. I. Haddad, "Time-dependent modeling of resonant-tunneling diodes from direct solution of the Schrödinger equation," J. Appl. Phys., 64(7), 1988, pp. 3564-3569.
30. A. Rydberg, H. Grönquist, and E. Kollberg, "A theoretical and experimental investigation on millimeter-wave quantum well oscillators," Microwave Opt. Technol. Lett., 1(9), 1988, pp. 333-336.
31. E. R. Brown, T. C. L. G. Sollner, C. D. Parker, W. D. Goodhue, and C. L. Chen, "Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes," Appl. Phys. Lett., 55(17), 1989, pp. 1777-1779.
32. E. R. Brown, J. R. Söderström, C. D. Parker, L. J. Mahoney, K. M. Molvar, and T. C. McGill, "Oscillations up to 712 GHz in InAs/AlSb resonant tunneling diodes," Appl. Phys. Lett., 58(20), 1991, pp. 2291-2293.
33. M. E. Hines, "High frequency negative-resistance circuit principles for Esaki diode applications," Bell Syst. Tech. J., 39, 1960, pp. 477-513.
34. C. Kidner, I. Mehdi, J. East, and G. I. Haddad, "Power and stability limitations of resonant tunneling diodes," IEEE Trans. Microwave Theory Tech., 38(7), 1990, pp. 864-873.
35. E. Schomburg, M. Henini, J. M. Chamberlain, D. P. Steenson, S. Brandl, K. Hofbeck, K. F. Renk, and W. Wegscheider, "Self-sustained current oscillation above 100 GHz in a GaAs/AlAs superlattice," Appl. Phys. Lett., 74(15), 1999, pp. 2179-2181.
36. H. Eisele, "Active two-terminal devices for terahertz power generation by multiplication," in Terahertz Sources and Systems, R. E. Miles, P. Harrison, and D. Lippens (Eds.), NATO Science Series, Series II: Mathematics, Physics, and Chemistry - Vol. 27, 2001, pp. 69-86.
37. J. B. Gunn, "Instabilities of current in III-V semiconductors, " IBM J. Res. Develop., 8, 1964, pp. 141-159.
38. B. K. Ridley and T. B. Watkins, "The possibility of negative resistance effects in semiconductors," Proc. Phys. Soc. Lond., 78, 1961, pp. 293-304.
39. J. A. Copeland, "LSA oscillator-diode theory," J. Appl. Phys., 38, 1967, pp. 3096-3101.
40. H. Eisele, A. Rydberg, and G. I. Haddad, "Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above," IEEE Trans. Microwave Theory Tech., 48(4), 2000, pp. 626-631.
41. H. Eisele and R. Kamoua, "InP Gunn devices for low-noise and high-performance oscillators in the 80-400 GHz frequency range," Proc. Ninth Int. Conf. Terahertz Electronics, October 15-16, 2001, Charlottesville, Virginia.
42. V. P. Kesan, D. P. Neikirk, B. G. Streetman, and P. A. Blakey, "A new transit-time device using quantum well injection," IEEE Electron Dev. Lett., 8(4), 1987, pp. 129-131.
43. M. Elta and G. I. Haddad, "High-frequency limitations of IMPATT, MITATT, and TUNNETT mode devices," IEEE Trans. Microwave Theory Tech., 27(5), 1979, pp. 442-449.
44. M. Elta and G. I. Haddad, "Large-signal performance of microwave transit-time devices in mixed tunneling and avalanche breakdown," IEEE Trans. Electron Dev., 26(6), 1979, pp. 941-948.
45. P. A. Rolland, M. R. Friscourt, D. Lippens, C. Dalle, and J. L. Nieruchalski, "Millimeter Wave Solid-State Power Sources," Proc. Int. Workshop Millimeter Waves, Rome, Italy, April 2-4, 1986, pp. 125-177.
46. P. T. Greiling, W. E. Schroder, and G. I. Haddad, "Basic principles and properties of avalanche transit-time devices," IEEE Trans. Microwave Theory Tech., 18(11), 1970, pp. 752-772.
47. R. K. Mains and G. I. Haddad, "Properties and capabilities of millimeter-wave IMPATT diodes," Pt. III, Ch. 3 in Infrared and Millimeter Waves, Vol. 10, K. J Button (Ed.), Academic Press, New York, 1984.
48. S. P. Kwok and G. I. Haddad, "Power limitations in BARITT devices," Solid-State Electron., 19(9), 1976, pp. 795-807.
49. J. East, H. Nguyen-Ba, and G. I. Haddad, "Design fabrication, and evaluation of BARITT devices for doppler system applications," IEEE Trans. Microwave Theory Tech., 24(12), 1976, pp. 943-948.
50. H. Nguyen-Ba and G. I. Haddad, "Effects of doping profile on the performance of BARITT devices," IEEE Trans. Electron Dev., 24(9), 1977, pp. 1154-1163.
51. U. Güttich, "BARITT-Dioden für das V-Band," Mikrow. Magaz., 13(1), 1987, pp. 37-40.
52. K. Chang, W. F. Thrower, and G. M. Hayashibara, "Millimeter-wave silicon IMPATT sources and combiners for the 110-260-GHz range," IEEE Trans. Microwave Theory Tech., 29(12), 1981, pp. 1278-1284.
53. + silicon IMPATT diodes in 200 GHz and 300 GHz bands," Electron. Lett., 12(6), 1976, pp. 148-149.
54. T. Ishibashi, M. Ino, T. Makimura, and M. Ohmori, "Liquid-nitrogen-cooled submillimeter-wave silicon IMPATT diodes," Electron. Lett., 13(10), 1977, pp. 299-300.
55. H. Eisele, C-C. Chen, G. O. Munns, and G. I. Haddad, "The potential of InP IMPATT diodes as high-power millimeter-wave sources: first experimental results," Dig. 1996 IEEE MTT-S Int. Microwave Symp., June 17-21, 1996, San Francisco, California, pp. 529-532.
56. I. Mehdi, R. Mains, and G. I. Haddad, "Microwave and millimeter-wave power generation in silicon carbide avalanche devices," J. Appl. Phys., 64(7), 1988, pp. 3564-3569.
57. th Int. Conf. Space Terahertz Technology, San Diego, California, February 2001, pp. 62-72.
58. M. Ohmori, T. Ishibashi, and S. Ono, "Dependency of the highest harmonic oscillations frequency on junction diameter of IMPATT diodes," IEEE Trans. Electron Dev., 24(12), 1977, pp. 1323-1329.
59. D. C. Smith, T. J. Simmons, and M. R. B. Jones, "A comparison of the performance of millimeter-wave semiconductor oscillator devices and circuits," Dig. 1983 IEEE MTT-S Int. Microwave Symp., May 31 - June 3, 1983, Boston, Massachusetts, pp. 127-129.
60. C. Dalle, P. A. Rolland, and G. Lleti, "Flat doping profile double-drift silicon IMPATT for reliable CW high-power high efficiency generation in the 94-GHz-Window," IEEE Trans. Electron Dev., 37(1), 1990, pp. 235-236.
61. H. Eisele, unpublished results.
62. M. R. Rakhshandehroo and S. W. Pang, "Fabrication of Si field emitters by dry etching and mask erosion," J. Vac. Sci. Technol., B14, 1996, pp. 612-616.
63. M. R. Rakhshandehroo and S. W. Pang, "Fabrication of self-aligned silicon field emission devices and effects of surface passivation on emission current," J. Vac. Sci. Technol, B16, 1998, pp. 765-769.
64. M. R. Rakhshandehroo and S. W. Pang, "High current density Si field emission devices with plasma passivation and HfC coating," IEEE Trans. Electron Dev., 46(4), 1999, pp. 792-797.
65. S. W. Pang, personal communication.