Monolithic integrated circuits incorporating InP-based heterostructure barrier varactors

IEEE Microwave and Wireless Components Letters

Volumn 12, Issue 8, 2002, Pages 281-283

  David, T ^a   Arscott, S ^a   Munier, J M ^b   Akalin, T ^a   Mounaix, P ^c   Beaudin, G ^b   Lippens, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b OBSERVATOIRE DE PARIS   (France)

^c UNIVERSITÉ DE BORDEAUX   (France)

Author keywords

Epitaxial liftoff; Frequency multipliers; Heterojunction barrier varactor; Millimeter wave monolithic integrated circuits; Transfer substrate

Indexed keywords

AMPLIFIERS (ELECTRONIC); BANDWIDTH; HETEROJUNCTIONS; NATURAL FREQUENCIES; QUARTZ; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; VARACTORS;

HETEROSTRUCTURE BARRIER VARACTORS (HBV);

MONOLITHIC INTEGRATED CIRCUITS;

EID: 0036688602     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2002.801935     Document Type: Article

References (8)

1. Quantum-barrier-varactor diode for high efficiency millimeter-wave multiplier
2. Record performances of a 250 GHz InP based heterostructure barrier varactor tripler
3. Improved frequency tripler with integrated single barrier
4. Submicron transferred-substrate heterojunction bipolar transistors
5. 2.5 THz GaAs monolithic membrane-diode mixer
6. Improved 240 GHz subharmonically pumped planar schottky diode mixers for space-borne applications
7. Substrate transfer process for InP-based heterostructure barrier varactor devices
8. Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz