Thermal constraints for heterostructure barrier varactors

IEEE Electron Device Letters

Volumn 25, Issue 11, 2004, Pages 713-715

  Ingvarson, Mattias ^a   Alderman, Byron ^b   Olsen, Arne Øistein ^a   Vukusic, Josip ^a   Stake, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HEAT RESISTANCE; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; MILLIMETER WAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL CONDUCTIVITY;

FREQUENCY MULTIPLIER; HETEROSTRUCTURE BARRIER VARACTOR (HBV); POWER HANDLING CAPACITY; SEMICONDUCTOR DEVICE THERMAL FACTORS; THERMAL CONSTRAINT;

VARACTORS;

EID: 8344259866     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.836804     Document Type: Article

References (14)

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