Planar multibarrier 80/240-GHz heterostructure barrier varactor triplers

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 4, 1997, Pages 512-518

  Jones, J Robert ^a  

^a University of Virginia   (United States)

Author keywords

Frequency conversion; Millimeter wave diodes; Semiconductor heterojunctions; Varactors

Indexed keywords

DESIGN; MILLIMETER WAVES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TECHNOLOGY; VARACTORS;

PLANAR MULTIBARRIER TRIPLERS;

FREQUENCY CONVERTER CIRCUITS;

EID: 0031125832     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.566631     Document Type: Article

References (16)

1. E. Kollberg and A. Rydberg, "Quantum-barrier varactor diodes for highefficiency millimetre-wave multipliers," Electron. Lett., vol. 25, no. 25, pp. 1696-1698, Dec. 1989.
2. J. R. Jones, G. B. Tait, S. H. Jones, and D. S. Katzer, "DC and large-signal time-dependent electron transport in heterostructure devices: An investigation of the heterostructure barrier varactor," IEEE Trans. Electron Devices, vol. 42, pp. 1393-1403, Aug. 1995.
3. J. R. Jones, S. H. Jones, G. B. Tait, and M. F. Zybura, "Heterostructure barrier varactor simulation using an integrated hydrodynamic device/harmonic-balance circuit analysis technique," IEEE Microwave Guided Wave Lett., vol. 4, pp. 411-113, Dec. 1994.
4. -, "Correction to 'Heterostructure barrier varactor simulation using an integrated hydrodynamic device/harmonic-balance circuit analysis technique,'" IEEE Microwave Guided Wave Lett., vol. 5, p. 62, Feb. 1995.
5. M. F. Zybura, J. R. Jones, S. H. Jones, and G. B. Tait, "Simulation of 100-300 GHz solid-state harmonic sources," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 955-961, Apr. 1995.
6. W. L. Bishop, K. McKinney, R. J. Mattauch, T. W. Crowe, and G. Green, "A novel whiskerless Schottky diode for millimeter and submillimeter wave applications," in IEEE MTT-S Int. Microwave Symp. Dig., Las Vegas, NV, June 9-11, 1987, p. 607-610.
7. W. L. Bishop, K. A. Mcleod, and R. J. Mattauch, "Whiskerless Schottky diode," U.S. Patent 5,041,881, Aug. 20, 1991.
8. T. W. Crowe, W. C. B. Peatman, R. Zimmermann, and R. Zimmermann, "Consideration of velocity saturation in the design of GaAs varactor diodes," IEEE Microwave Guided Wave Lett., vol. 3, pp. 161-163, June 1993.
9. W. L. Bishop, T. W. Crowe, and R. J. Mattauch, "Planar GaAs Schottky diode fabrication: Progress and challenges," in Proc. Fourth Int. Symp. Space Terahertz Technol, Mar. 30-Apr. 1, 1993, Los Angeles, CA, pp. 415-29.
10. F. H. Dill, "Planarization layers," IBM Tech. Disclosure Bull., vol. 27, no. IB, pp. 591-592, June 1984.
11. J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, and P. Kirchner, "Ohmic contacts to ra-GaAs using graded band gap layers of Gai-zIn-As grown by molecular beam epitaxy," J. Vac. Sei. Technol., vol. 19, no. 3, pp. 626-627, Sep./Oct. 1981.
12. N. Papanicolaou, S. H. Jones, J. R. Jones, W. T. Anderson, and R. S. Sillmon, "High temperature characteristics of amorphous TiWSi(x) nonalloyed ohmic contacts to GaAs," J. Appl. Phys., vol. 72, no. 10, pp. 4954-4957, Nov. 1992.
13. J. W. Archer, "An efficient 200-290 GHz frequency tripler incorporating a novel stripline structure," IEEE Trans. Microwave Theory Tech., vol. MTT-32, pp. 416-420, Apr. 1984.
14. R. F. Bradley, "The application of planar monolithic technology to Schottky varactor millimeter-wave frequency multipliers," Ph.D. dissertation, Dept. of Electrical Engineering, Univ. of Virginia, Charlottesville, VA, 1992.
15. A. Rydberg, H. Grönqvist, and E. Kollberg, "Millimeter- and submillimeter-wave multipliers using quantum-barrier varactor (QBV) diodes," IEEE Electron Device Lett., vol. 11, pp. 373-375, Sept. 1990.
16. D. Choudhury, M. A. Frerking, and P. D. Batelaan, "A 200 GHz tripler using a single barrier varactor," IEEE Trans. Microwave Theory Tech., vol. 41, pp. 595-599, Apr. 1993.