Heterostructure-barrier-varactor design

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue , 2000, Pages 677-682

  Stake, Jan ^a   Jones, Stephen H ^b   Dillner, Lars ^c   Hollung, Stein ^c   Kollberg, Erik L ^c  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b Virginia Semiconductor Inc   (United States)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

HBV; Varactor frequency tripler

Indexed keywords

HETEROSTRUCTURE BARRIER VARACTOR; OPTIMUM EMBEDDING IMPEDANCES;

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC IMPEDANCE; ELECTRIC POWER SUPPLIES TO APPARATUS; ENERGY GAP; FREQUENCY DOMAIN ANALYSIS; FREQUENCY MULTIPLYING CIRCUITS; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

VARACTORS;

EID: 0034172639     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.841959     Document Type: Article

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