Ultrathin high-κ gate dielectric technology for germanium MOS applications

Device Research Conference - Conference Digest, DRC

Volumn 2002-January, Issue , 2002, Pages 191-192

  Chui, Chi On ^a   Ramanathan, S ^a   Triplett, B B ^a   McIntyre, P C ^a   Saraswat, K C ^a  

^a Stanford University   (United States)

Author keywords

Capacitance; Capacitance voltage characteristics; Dielectric substrates; Frequency; Germanium; High K dielectric materials; High K gate dielectrics; Hysteresis; MOS devices; Surface treatment

Indexed keywords

CAPACITANCE; GATE DIELECTRICS; GERMANIUM; HYSTERESIS; MOS DEVICES; SUBSTRATES; SURFACE TREATMENT; TEMPERATURE;

CAPACITANCE VOLTAGE CHARACTERISTIC; DIELECTRIC SUBSTRATES; FREQUENCY; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS;

DIELECTRIC MATERIALS;

EID: 0012305143     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2002.1029595     Document Type: Conference Paper

References (5)

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