-
1
-
-
0003850954
-
-
2nd ed. Englewood Cliffs, NJ: Prentice-Hall
-
J. Rabaey, A. Chandrakasan, and B. Nikolic, Digital Intergrated Circuits: A Design Perspective, 2nd ed. Englewood Cliffs, NJ: Prentice-Hall, 2003.
-
(2003)
Digital Intergrated Circuits: A Design Perspective
-
-
Rabaey, J.1
Chandrakasan, A.2
Nikolic, B.3
-
3
-
-
0032202489
-
Low-Power SRAM design using half-swing pulse-mode techniques
-
Nov.
-
K. W. Mai, “Low-Power SRAM design using half-swing pulse-mode techniques,” IEEE J. Solid-State Circuits, vol. 33, no. 11, pp. 659–1671, Nov. 1998.
-
(1998)
IEEE J. Solid-State Circuits
, vol.33
, Issue.11
, pp. 659-1671
-
-
Mai, K.W.1
-
4
-
-
2942691849
-
90% write power saving SRAM using sense-amplifying memory cell
-
Jun.
-
S. Hattori and T. Sakurai, “90% write power saving SRAM using sense-amplifying memory cell,” IEEE J. Solid-State Circuits, vol. 39, no. 6, pp. 927–933, Jun. 2004.
-
(2004)
IEEE J. Solid-State Circuits
, vol.39
, Issue.6
, pp. 927-933
-
-
Hattori, S.1
Sakurai, T.2
-
5
-
-
0032294454
-
Low power SRAM design using hierarchical divided bit-line approach
-
A. Karandikar and K. K. Parhi, “Low power SRAM design using hierarchical divided bit-line approach,” in Proc. Int. Conf. Comput. Des., 1998, pp. 82–88.
-
(1998)
Proc. Int. Conf. Comput. Des.
, pp. 82-88
-
-
Karandikar, A.1
Parhi, K.K.2
-
6
-
-
20444436009
-
A low-power SRAM using hierarchical bit line and local sense amplifiers
-
Jun.
-
B. Yang and L. Kim, “A low-power SRAM using hierarchical bit line and local sense amplifiers,” IEEE J. Solid-State Circuits, vol. 40, no. 6, pp. 1366–1376, Jun. 2005.
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.6
, pp. 1366-1376
-
-
Yang, B.1
Kim, L.2
-
7
-
-
0141750607
-
Low-leakage asymmetric-cell SRAM
-
Aug.
-
N. Azizi, “Low-leakage asymmetric-cell SRAM,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 11, no. 4, pp. 701–715, Aug. 2003.
-
(2003)
IEEE Trans. Very Large Scale Integr. (VLSI) Syst.
, vol.11
, Issue.4
, pp. 701-715
-
-
Azizi, N.1
-
9
-
-
0023437909
-
Static-noise margin analysis of MOS SRAM cells
-
Oct.
-
E. Seevinck, “Static-noise margin analysis of MOS SRAM cells,” IEEE J. Solid-State Circuits, vol. SC-22, no. 5, pp. 748–754, Oct. 1987.
-
(1987)
IEEE J. Solid-State Circuits
, vol.SC-22
, Issue.5
, pp. 748-754
-
-
Seevinck, E.1
-
10
-
-
18744365842
-
SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction
-
Apr.
-
K. Zhang, “SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction,” IEEE J. Solid-State Circuits, vol. 40, no. 4, pp. 895–901, Apr. 2005.
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.4
, pp. 895-901
-
-
Zhang, K.1
-
11
-
-
85008033970
-
-
Berkeley, CA [Online]. Available:
-
Berkeley Predictive Technology Model UC Berkeley Device Group, Berkeley, CA [Online]. Available: http://www-device.eecs.berkeley.edu/-ptm/.
-
-
-
|