Low-Leakage Asymmetric-Cell SRAM

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Volumn 11, Issue 4, 2003, Pages 701-715

  Azizi, Navid ^a   Najm, Farid N ^a   Moshovos, Andreas ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

Asymmetric static random access memory (SRAM) cell; Dual threshold voltage; Leakage current; Static memory

Indexed keywords

ELECTRIC POTENTIAL; LEAKAGE CURRENTS; STABILITY; STATIC RANDOM ACCESS STORAGE;

STATIC MEMORY;

VLSI CIRCUITS;

EID: 0141750607     PISSN: 10638210     EISSN: None     Source Type: Journal    
DOI: 10.1109/TVLSI.2003.816139     Document Type: Article

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