Ion-implantation in SiC and GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 416-420

  Papanicolaou, N ^a   Rao, M V ^b   Molnar, B ^a   Tucker, J ^b   Edwards, A ^b   Holland, O W ^c   Ridgway, M C ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b George Mason University   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Activation; Annealing; GaN; Implantation; SiC

Indexed keywords

ALUMINUM; ANNEALING; ANTIMONY; ARSENIC; CARRIER CONCENTRATION; DIFFUSION; NITROGEN; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMODYNAMIC STABILITY;

GALLIUM NITRIDE;

ION IMPLANTATION;

EID: 0033513778     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00880-5     Document Type: Article

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