Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN

Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 4917-4921

  Sun, W H ^a   Chua, S J ^a   Wang, L S ^a   Zhang, X H ^a  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BAND GAP ENERGY; HIGH QUALITY; LO PHONONS; LONGITUDINAL OPTICAL; MULTIPHONONS; PHOTOLUMINESCENCE MEASUREMENTS; POSTIMPLANTATION ANNEALING; RESONANCE RAMAN SCATTERING; RESONANT CONDITION; RESONANT RAMAN SCATTERING; SAMPLE TEMPERATURE; TEMPERATURE RANGE;

PHONONS; RAMAN SCATTERING;

GALLIUM NITRIDE;

EID: 0037091695     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1455682     Document Type: Article

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