Lattice damage produced in GaN by swift heavy ions

Journal of Applied Physics

Volumn 95, Issue 10, 2004, Pages 5360-5365

  Kucheyev, S O ^a   Timmers, H ^b   Zou, J ^c   Williams, J S ^d   Jagadish, C ^d   Li, G ^e  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF QUEENSLAND   (Australia)

^d AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^e Ledex Corporation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC ENERGY LOSS; EPILAYERS; MATERIAL DECOMPOSITION;

CRYSTAL DEFECTS; DECOMPOSITION; ENERGY DISSIPATION; HEAVY IONS; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SURFACE TREATMENT; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

EID: 2942566170     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1703826     Document Type: Article

References (51)

1. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
2. S. O. Kucheyev, J. S. Williams, and S. J. Pearton, Mater. Sci. Eng., R. 33, 51 (2001).
3. B. Rauschenbach, in III-Nitride Semiconductors: Electrical, Structural and Defects Properties, edited by M. O. Manasreh (Elsevier, Amsterdam, 2000), Chap. 7.
4. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000).
5. See, for example, J. S. Williams, Rep. Prog. Phys. 49, 491 (1986).
6. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids (Pergamon, New York, 1985).
7. R. L. Fleischer, P. B. Price, and R. M. Walker, Nuclear Tracks in Solids (University of California Press, Berkeley, 1975).
8. B. E. Fischer and R. Spohr, Rev. Mod. Phys. 55, 907 (1983).
9. F. F. Komarov, Langmuir 12, 199 (1996).
10. H. Dammak, A. Dunlop, D. Lesueur, A. Brunelle, S. Della-Negra, and Y. Le Beyec, Phys. Rev. Lett. 74, 1135 (1995).
11. O. Herre, W. Welsch, E. Wendler, P. I. Gaiduk, F. F. Komarov, S. Klaumünzer, and P. Meier, Phys. Rev. B 58, 4832 (1998).
12. S. J. Zinkle, V. A. Skuratov, and D. T. Hoelzer, Nucl. Instrum. Methods Phys. Res. B 191, 758 (2002).
13. P. I. Gaiduk, A. N. Larsen, C. Trautmann, and M. Toulemonde, Phys. Rev. B 66, 045 316 (2002).
14. G. Szenes, Z. E. Horvath, B. Pecz, F. Paszti, and L. Toth, Phys. Rev. B 65, 045 206 (2002).
15. J. Vetter, Radiat. Meas. 25, 33 (1995).
16. S. A. Karamyan, Nucl. Tracks Radiat. Meas. 18, 365 (1991).
17. A. Dunlop, G. Jaskierowicz, and S. Della-Negra, Nucl. Instrum. Methods Phys. Res. B 146, 302 (1998).
18. A. Colder, O. Marty, B. Canut, M. Levalois, P. Marie, X. Portier, S. M. M. Ramos, and M. Toulemonde, Nucl. Instrum. Methods Phys. Res. B 174, 491 (2001).
19. A. Colder, B. Canut, M. Levalois, P. Marie, X. Portier, and S. M. M. Ramos, J. Appl. Phys. 91, 5853 (2002).
20. S. M. M. Ramos, N. Bonardi, B. Canut, and S. Della-Negra, Phys. Rev. B 57, 189 (1998).
21. Note that the models discussed here are not limited to the case of crystalline solids but can also be applied to explain the track formation found in some amorphous materials such as metallic glasses, fused silica, and various polymers.
22. M. Toulemonde, C. Dufour, and E. Paumier, Phys. Rev. B 46, 14 362 (1992).
23. R. L. Fleischer, P. B. Price, R. M. Walker, and E. L. Hubbard, Phys. Rev. 156, 353 (1967).
24. P. Stampfli and K. H. Bennemann, Phys. Rev. B 42, 7163 (1990).
25. P. Stampfli, Nucl. Instrum. Methods Phys. Res. B 107, 138 (1996).
26. P. Stumm and D. A. Drabold, Phys. Rev. Lett. 79, 677 (1997).
27. S. O. Kucheyev, J. S. Williams, C. Jagadish, V. S. J. Craig, and G. Li, Appl. Phys. Lett. 77, 1455 (2000).
28. S. O. Kucheyev, J. S. Williams, J. Zou, C. Jagadish, and G. Li, Appl. Phys. Lett. 77, 3577 (2000).
29. 3 interface. Such increased disorder is related to scattering from a thin GaN buffer layer grown at a low temperature as well as from an increased concentration of as-grown lattice defects near the epilayer/substrate interface.
30. It is also possible that, immediately after SHI bombardment, tracks are completely amorphous but experience recrystallization over the period up to several days after ion bombardment before the subsequent XTEM analysis. In addition, effective recrystallization of tracks could occur during electron beam irradiation in the TEM. It should also be noted that ion tracks in GaN are stable at room temperature. Indeed, an XTEM analysis of samples stored at 300 K over one year has revealed no changes in track size and density.
31. C. M. Wang, W. Jiang, W. J. Weber, and L. E. Thomas, J. Mater. Res. 17, 2945 (2002).
32. Y. G. Wang, J. Zou, S. O. Kucheyev, J. S. Williams, C. Jagadish, and G. Li, Electrochem. Solid-State Lett. 6, G34 (2003).
33. J. F. Gibbons, Proc. IEEE 60, 1062 (1972).
34. I. A. Abroyan, V. S. Belyakov, O. A. Podsvirov, and A. I. Titov, Interaction of Atomic Particles with Solids. Proc. of All-Soviet Symposium (MGU, Moscow, 1972), p. 296 (in Russian).
35. I. A. Abroyan, V. S. Belyakov, and A. I. Titov, Mikroelektronika 5, 231 (1976) (in Russian).
36. W. J. Weber, Nucl. Instrum. Methods Phys. Res. B 166-167, 98 (2000).
37. A. I. Titov, S. O. Kucheyev, V. S. Belyakov, and A. Yu. Azarov, J. Appl. Phys. 90, 3867 (2001).
38. It should also be noted that the normalized RBS/C yield, plotted in Fig. 4, only approximately represents the damage buildup behavior.
39. W. Jiang, W. J. Weber, S. Thevuthasan, G. J. Exarhos, and B. J. Bozlee, MRS Internet J. Nitride Semicond. Res. 4S1, G6.15 (1999).
40. W. Jiang, W. J. Weber, and S. Thevuthasan, J. Appl. Phys. 87, 7671 (2000).
41. See, for example, reviews by J. E. E. Baglin, Nucl. Instrum. Methods Phys. Res. B 65, 119 (1992); P. A. Ingemarsson, ibid. 44, 437 (1990).
42. See, for example, reviews by J. E. E. Baglin, Nucl. Instrum. Methods Phys. Res. B 65, 119 (1992); P. A. Ingemarsson, ibid. 44, 437 (1990).
43. I. V. Mitchell, J. S. Williams, P. Smith, and R. G. Elliman, Appl. Phys. Lett. 44, 193 (1984).
44. I. V. Mitchell, G. Nyberg, and R. G. Elliman, Appl. Phys. Lett. 45, 137 (1984).
45. S. O. Kucheyev, J. E. Bradby, J. S. Williams, C. Jagadish, M. Toth, M. R. Phillips, and M. V. Swain, Appl. Phys. Lett. 77, 3373 (2000).
46. See, for example, G. Schiwietz, E. Luderer, G. Xiao, and P. L. Grande, Nucl. Instrum. Methods Phys. Res. B 175-177, 1 (2001), and references therein.
47. J. C. Phillips, Bonds and Bands in Semiconductors (Academic, New York, 1973).
48. F. F. Komarov and V. A. Belyi, J. Exp. Theor. Phys. 95, 316 (2002).
49. A. Miotello and R. Kelly, Nucl. Instrum. Methods Phys. Res. B 122, 458 (1997).
50. E. Bringa and R. E. Johnson, Phys. Rev. Lett. 88, 165501 (2002).
51. H. M. Naguib and R. Kelly, Radiat. Eff. 25, 1 (1975).