Prediction of transient induced by neutron/proton in CMOS combinational logic cells

Proceedings - IOLTS 2006: 12th IEEE International On-Line Testing Symposium

Volumn 2006, Issue , 2006, Pages 63-71

  Hubert, G ^a   Bougerol, A ^a   Miller, F ^a   Buard, N ^a   Anghel, L ^b   Carriere, T ^a   Wrobel, F ^c   Gaillard, R ^d  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b TIMA LABORATORY   (France)

^c UNIVERSITÉ CÔTE D'AZUR   (France)

^d University of Nice Sophia Antipolis ^*  (France)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CELLS; SECONDARY ION EFFECTS; TRANSIENT EFFECTS;

CMOS INTEGRATED CIRCUITS; LOGIC CIRCUITS; MONTE CARLO METHODS; MOS DEVICES;

LOGIC GATES;

EID: 34247275293     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IOLTS.2006.51     Document Type: Conference Paper

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