Spectroscopy of sub-wetting layer states in InAs/GaAs quantum dot bi-layer systems

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 86-96

  Mazur, Yu I ^a   Wang, Zh M ^a   Kissel, H ^a,c   Zhuchenko, Z Ya ^b   Lisitsa, M P ^b   Tarasov, G G ^b   Salamo, G J ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c DILAS Diodenlaser GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GROUND STATE; INDIUM ARSENIDE; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE;

DEFECT STATES; INTERLAYER COUPLING; LOCALIZED STATES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247221597     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/015     Document Type: Article

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