Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures

Applied Physics Letters

Volumn 86, Issue 6, 2005, Pages 1-3

  Mazur, Yu I ^a   Wang, Zh M ^a   Tarasov, G G ^a,d   Xiao, Min ^a   Salamo, G J ^a   Tomm, J W ^b   Talalaev, V ^b   Kissel, H ^c  

^a UNIVERSITY OF ARKANSAS   (United States)

^b MAX BORN INSTITUT   (Germany)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC BILAYERS; CARRIER TRANSFER; GROWTH DIRECTIONS; SUBSTRATE TEMPERATURE;

APPROXIMATION THEORY; MONOLAYERS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 21044446837     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861980     Document Type: Article

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