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Journal of Crystal Growth

Volumn 288, Issue 1, 2006, Pages 12-17

Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy

(6) Jiang, De Sheng a Qu, Yu Hua a Ni, Hai Qiao a Wu, Dong Hai a Xu, Ying Qiang a Niu, Zhi Chuan a

a INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

A3. Molecular beam epitaxy; A3. Quantum wells; B2. Semiconducting III V materials

Indexed keywords

ANTIMONY; ELECTROMAGNETIC WAVE EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTIMIZATION; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS;

ANNEALING EFFECTS; ANNEALING TEMPERATURE; LUMINESCENCE EFFICIENCY; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 31644445011 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.12.016 Document Type: Conference Paper

Times cited : (8)

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