Structural, optical and electrical properties of ZnS/porous silicon heterostructures

Chinese Physics Letters

Volumn 24, Issue 3, 2007, Pages 825-827

  Wang, Cai Feng ^a   Li, Qing Shan ^a,b   Lv, Lei ^a   Zhang, Li Chun ^a   Qi, Hong Xia ^a   Chen, Hou ^b  

^a QUFU NORMAL UNIVERSITY   (China)

^b LUDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; II-VI SEMICONDUCTORS; POROUS SILICON; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; X RAY DIFFRACTION;

CUBIC PHASE; ELECTRO-CHEMICAL ANODIZATION; ELECTRON MICROSCOPE IMAGES; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE; POROUS SILICON SUBSTRATES; POROUS SILICON SURFACES; PULSED-LASER DEPOSITION; X RAY DIFFRACTION PATTERNS; ZNS FILMS;

ZINC SULFIDE;

EID: 34247188573     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/3/066     Document Type: Article

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