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Journal of Crystal Growth

Volumn 237-239, Issue 1 4 II, 2002, Pages 1594-1598

Comparison of hexagonal ZnS film properties on c- and a-sapphires

(6) Yoo, Y Z a Chikyow, T b Ahmet, P b Jin, Zheng Wu b Kawasaki, M c Koinuma, H a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

c TOHOKU UNIVERSITY (Japan)

Author keywords

A3. Laser epitaxy; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

EXCIMER LASERS; EXCITONS; FILM GROWTH; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC SULFIDE;

LASER EPITAXY;

EPITAXIAL GROWTH;

EID: 0036530906 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)02349-1 Document Type: Article

Times cited : (14)

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