XAFS studies of Rh nanostructures on porous silicon

Journal of Synchrotron Radiation

Volumn 6, Issue 3, 1999, Pages 529-531

  Zhu, Y J ^a   Coulthard, I ^a,b   Sham, T K ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Porous silicon; Rh nanostructure; XANES; XEOL

Indexed keywords

EID: 0033440426     PISSN: 09090495     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0909049599001235     Document Type: Article

References (6)

1. Coulthard, I., Jiang, D.-T., Lorimer, J. W., Sham, T. K., & Feng, X.-H.(1993). Langmuir, 9, 3441-3446.
2. Coulthard, I. & Sham, T. K.(1997). Mater. Res. Soc. Symp. Proc. 452, 547-549.
3. Cullis, A. G., Canham, L.T. & Calcott, P. D. J.(1997). J. Appl. Phys. 82 (3), 909-965.
4. Jiang D. T., Coulthard, I., Sham, T. K., Lorimer, J.W., Frigo, S. P., Feng, X. H.& Rosenberg, R.A.(1993) J. Appl. Phys. 74 (10), 6335-6339.
5. Sham T.K., Jiang, D.-T., Coulthard, I., Lorimer, J.W., Feng, X.-H., Tan, K. H., Frigo, S. P., Rosenberg, R.A., Houghton, D.C. & Bryskiewicz, B.(1993). Nature, 363, 331-333.
6. Sham, T. K., Coulthard, I., Lorimer, J.W., Hiraya, A. & Watanabe, M.(1994). Chem. Mater. 6, 2085-2889.