First-principles electronic structure of Mn-doped GaAs, GaP, and GaN semiconductors

Journal of Physics Condensed Matter

Volumn 19, Issue 16, 2007, Pages

  Schulthess, T C ^a   Temmerman, W M ^b   Szotek, Z ^b   Svane, A ^c   Petit, L ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b DARESBURY LABORATORY   (United Kingdom)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; GROUND STATE; MAGNETIC MOMENTS; SEMICONDUCTING MANGANESE COMPOUNDS;

ELECTRONIC GROUND STATE CONFIGURATION; FIRST PRINCIPLES ELECTRONIC STRUCTURE CALCULATIONS; LOCAL SPIN DENSITY APPROXIMATION (LSDA); SELF INTERACTION FREE APPROACH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 34247159118     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/16/165207     Document Type: Article

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