Weakly dispersive band near the fermi level of GaMnAs due to Mn interstitials

Physical Review Letters

Volumn 95, Issue 23, 2005, Pages

  Ernst, A ^a   Sandratskii, L M ^a   Bouhassoune, M ^a   Henk, J ^a   Luders M ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC BAND; INTERSTITIAL IMPURITIES; MN IMPURITIES;

APPROXIMATION THEORY; CRYSTAL IMPURITIES; FERMI LEVEL; MAGNETIC SEMICONDUCTORS; PHOTOEMISSION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 28844487341     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.95.237207     Document Type: Article

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