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Volumn PV 2005-10, Issue , 2005, Pages 159-164
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Conductive atomic force microscopy study of leakage currents through microscopic structural defects in high-k gate dielectrics
a b a,b c a |
Author keywords
[No Author keywords available]
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CAPACITORS;
DEFECTS;
DIELECTRIC MATERIALS;
ELECTRON TRANSPORT PROPERTIES;
TITANIUM DIOXIDE;
CONDUCTIVE ATOMIC FORCE MICROSCOPY;
MACROSCOPIC ELECTRICAL MEASUREMENTS;
SPACIAL RESOLUTION;
TOPOGRAPHIC INFORMATION;
LEAKAGE CURRENTS;
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EID: 31744447448
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (3)
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References (12)
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