Electrical characterisation of crystalline praseodymium oxide high-k gate dielectric MOSFETs

European Solid-State Device Research Conference

Volumn , Issue , 2003, Pages 243-246

  Schwalke, U ^a   Stefanov, Y ^a   Komaragiri, R ^a   Ruland, T ^a  

^a Institut für Halbleitertechnik IHT Technische Universtät Dannstadt   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISATION; HIGH-K GATE DIELECTRICS; MOSFETS; PRASEODYMIUM OXIDES;

EID: 84907691779     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2003.1256859     Document Type: Conference Paper

References (6)

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3. H. J. Osten, J.P. Liu, P. Gaworzewski, E. Bugiel, P. Zaumseii, "High-k Gate Dielectrics with Ultra-low Leakage Current Based on Praseodymium Oxide", IEDM 2001.
4. U. Schwalke, K. Boye, K. Haberle, R. Heller, G. Hess, G. Müller, T. Ruland, G. Tzschockel, J. Osten, A. Fissel, H.-J. Müssig, "Process Integration of Crystalline Pr203 High-k Gate Dielectrics", Proceedings of the 32nd European Solid-State Device Research Conference, ESSDERC, p. 407, Sept. 2002.
5. H. J. Osten, E. Bugiel, J. Dabrowski, A. Fissel, T. Guminskaya, J.P. Liu, H.J. Mussig P. Zaumseii, "Epitaxial Prasedymium Oxide: A New High-K Dielectric", Int. Workshop on Gate Insulators, Tokyo, Nov. 2001.
6. A. Kerber, E. Carter, L. Pantisano, M. Rosmeulen, R. Degraeve, T. Kauerauf, G. Groeseneken, H.E. Maes, U. Schwalke, "Characterization of the VT instability in SiO2 / HfO2 gate dielectrics", International Reliability Physics Symposium, IRPS, Dallas, USA, April 2003.