Analysis of the degradation and breakdown of thin SiO2 films under static and dynamic tests using a two-step stress procedure

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2138-2145

  Rodriguez, Rosana ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC LOSSES; MOS CAPACITORS; PROBABILITY DISTRIBUTIONS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILMS;

CONSTANT CURRENT STRESSES; CONSTANT VOLTAGE STRESSES; DIELECTRIC BREAKDOWN; THIN FILM CAPACITORS; THIN SILICON DIOXIDE FILMS; TWO STEP STRESS METHOD;

SEMICONDUCTOR DEVICE TESTING;

EID: 0034318349     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877176     Document Type: Article

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