Argon/tetramethysilane PECVD: From process diagnostic and modeling to a-Si:C:H hard coating composition

Diamond and Related Materials

Volumn 16, Issue 4-7 SPEC. ISS., 2007, Pages 1259-1263

  Soum Glaude, A ^a,b   Thomas, L ^a,b   Dollet, A ^a   Segur P ^c   Bordage, M C ^c  

^a PROMES   (France)

^b UNIVERSITÉ DE PERPIGNAN   (France)

^c CNRS   (France)

Author keywords

Hard coatings; PECVD; Plasma diagnosis; Plasma modeling; Si doped DLC

Indexed keywords

FILM GROWTH; MASS SPECTROMETRY; MICROSTRUCTURE; OPTICAL EMISSION SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILANES; SILICON CARBIDE;

ELECTROSTATIC PROBES; GAS-PHASE ANALYSES; PLASMA DIAGNOSIS; PLASMA MODELING; PLASMA REACTOR;

HARD COATINGS;

EID: 34147099072     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.11.003     Document Type: Article

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