Measurement of electron transport coefficients in tetramethylsilane vapour

Journal of Physics D: Applied Physics

Volumn 38, Issue 12, 2005, Pages 1918-1922

  Yoshida, Kosaku ^a   Mori, S ^a   Kishimoto, Y ^a   Ohuchi, H ^a   Hasegawa, H ^b   Shimozuma, M ^c   Tagashira, H ^d  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

^b TOMAKOMAI NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c HOKKAIDO UNIVERSITY   (Japan)

^d MURORAN INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ERRORS; IONIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRESSURE EFFECTS; SILANES; VELOCITY MEASUREMENT;

DRIFT DISTANCE; DRIFT VELOCITY; ELECTRON TRANSPORT COEFFICIENT; TETRAMETHYLSILANE;

ELECTRON TRANSPORT PROPERTIES;

EID: 21144447902     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/38/12/011     Document Type: Article

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