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Volumn 258, Issue 1, 2007, Pages 163-166

Potential sputtering from a Si surface by very highly charged ion impact

Author keywords

Highly charged ion (HCI); Potential sputtering; Scanning tunneling microscopy (STM); Si surface; Time of flight secondary ion mass spectrometry (TOF SIMS)

Indexed keywords

ION BOMBARDMENT; RADIATION EFFECTS; SCANNING TUNNELING MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SILICA; SPUTTERING; THIN FILMS;

EID: 34147092620     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.12.177     Document Type: Article
Times cited : (12)

References (17)
  • 17
    • 34147168270 scopus 로고    scopus 로고
    • M. Tona et al., J. Phys. Conf. Ser., submitted for publication.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.