Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact

Surface Science

Volumn 601, Issue 3, 2007, Pages 723-727

  Tona, Masahide ^a,b   Watanabe, Hirofumi ^a,b   Takahashi, Satoshi ^a   Nakamura, Nobuyuki ^a   Yoshiyasu, Nobuo ^a   Sakurai, Makoto ^c   Terui, Toshifumi ^d   Mashiko, Shinro ^d   Yamada, Chikashi ^a   Ohtani, Shunsuke ^a,b  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c KOBE UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Highly charged ion (HCI); Scanning tunneling microscope (STM); Si(1 1 1) (7 7) surface; Time of flight secondary ion mass spectrometry (TOF SIMS)

Indexed keywords

ELECTRON ENERGY LEVELS; MASS SPECTROMETRY; NANOSTRUCTURED MATERIALS; RADIATION EFFECTS; SCANNING TUNNELING MICROSCOPY; SILICON;

ATOMIC RESOLUTION; COULOMB EXPLOSION MODEL; HIGHLY CHARGED ION (HCI); TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF/SIMS);

SURFACE STRUCTURE;

EID: 33846357034     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.11.002     Document Type: Article

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