Demonstrative experiment for single-ion implantation technique using highly charged ions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 995-997

  Yoshiyasu, Nobuo ^a   Takahashi, Satoshi ^a   Shibata, Masa Aki ^a   Shimizu, Hiroshi ^b   Nagata, Kazuo ^a   Nakamura, Nobuyuki ^a   Tona, Masahide ^c   Sakurai, Makoto ^d   Yamada, Chikashi ^a   Ohtani, Shunsuke ^a,c  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

^b ULVAC PHI Inc   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d KOBE UNIVERSITY   (Japan)

Author keywords

Highly charged ion; Secondary electron; Single ion implantation

Indexed keywords

CHARGED PARTICLES; ELECTRON EMISSION; GRAPHITE; MONITORING; SCANNING TUNNELING MICROSCOPY;

HIGHLY CHARGED ION; SECONDARY ELECTRON; SINGLE-ION IMPLANTATION;

ION IMPLANTATION;

EID: 32244441371     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.995     Document Type: Article

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