Numerical simulation of temperature fields during the sublimation growth of SiC single crystals, using WIAS-HiTNIHS

Journal of Crystal Growth

Volumn 303, Issue 1 SPEC. ISS., 2007, Pages 352-356

  Geiser, Jürgen ^a   Klein, Olaf ^b   Philip, Peter ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b WEIERSTRASS INSTITUTE FOR APPLIED ANALYSIS AND STOCHASTICS   (Germany)

Author keywords

A1. Anisotropic thermal conductivity; A1. Computer simulation; A1. Heat transfer; A2. Growth from vapor; A2. Single crystal growth; B2. Semiconducting silicon compounds

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; HEAT CONDUCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY;

ANISOTROPIC THERMAL CONDUCTIVITY; GROWTH FROM VAPOR; PHYSICAL VAPOR TRANSPORT (PVT); SINGLE CRYSTAL GROWTH;

SINGLE CRYSTALS;

EID: 34047249385     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.350     Document Type: Article

References (20)

1. R. Madar, J. Camassel, E. Blanquet (Eds.), Mater. Sci. Forum 457-460, (2004) (Part II), in: Proceedings of Silicon Carbide and Related Materials ICSCRM, Lyon, France, October 5-10, Trans Tech Publications Ltd, 2004 (Chapters 9-11).
2. Hobgood H., Brady M., Calus M., Jenny J., Leonard R., Malta D., Müller S., Powell A., Tsvetkov V., Glass R., and Carter Jr. C. Mater. Sci. Forum 457-460 (2004) 3 in: Proceedings of the 10th International Conference on Silicon Carbide and Related Materials, October 5-10, 2003, Lyon, France
3. Pons M., Anikin M., Chourou K., Dedulle J., Madar R., Blanquet E., Pisch A., Bernard C., Grosse P., Faure C., Basset G., and Grange Y. Mater. Sci. Eng. B 61-62 (1999) 18
4. Rost H.-J., Siche D., Dolle J., Eiserbeck W., Müller T., Schulz D., Wagner G., and Wollweber J. Mater. Sci. Eng. B 61-62 (1999) 68
5. Rost H.-J., Doerschel J., Irmscher K., Schulz D., and Siche D. J. Crystal Growth 257 (2003) 75
6. Chen Q.-S., Zhang H., Prasad V., Balkas C., and Yushin N. Trans. ASME-J. Heat Transfer 123 6 (2001) 1098
7. Ma R., Zhang H., Prasad V., and Dudley M. Crystal Growth Des. 2 3 (2002) 213
8. Klein O., Philip P., and Sprekels J. Interfaces Free Boundaries 6 (2004) 295
9. Meziere J., Pons M., Cioccio L.D., Blanquet E., Ferret P., Dedulle J., Baillet F., Pernot E., Anikin M., Madar R., and Billon T. J. Phys. Condens. Matter 16 (2004) S1579
10. Geiser J., Klein O., and Philip P. Crystal Growth Des. 6 9 (2006) 2021
11. Klein O., and Philip P. IEEE Trans. Mag. 38 3 (2002) 1519
12. Klein O., Philip P., Sprekels J., and Wilmański K. J. Crystal Growth 222 4 (2001) 832
13. Klein O., and Philip P. Math. Mod. Methods Appl. Sci. 15 2 (2005) 227
14. J. Geiser, O. Klein, P. Philip, Numerical simulation of heat transfer in materials with anisotropic thermal conductivity: a finite volume scheme to handle complex geometries, Preprint No. 1033, Weierstrass Institute for Applied Analysis and Stochastics (WIAS), Berlin, submitted. Available in pdf-format at 〈http://www.wias-berlin.de/publications/preprints/1033/wias_preprints_1033.pdf〉 2005.
15. J. Fuhrmann, T. Koprucki, H. Langmach, pdelib: an open modular tool box for the numerical solution of partial differential equations. Design patterns, in: W. Hackbusch, G. Wittum (Eds.), Proceedings of the 14th GAMM Seminar on Concepts of Numerical Software, Kiel, January 23-25, 1998, University of Kiel, Germany, 2001.
16. J. Shewchuk, Triangle: Engineering a 2d quality mesh generator and delaunay triangulator, in: Proceedings of the First Workshop on Applied Computational Geometry, New York, Philadelphia, Pennsylvania, ACM, 1996, pp. 124-133.
17. Schenk O., Gärtner K., and Fichtner W. BIT 40 1 (2000) 158
18. Schenk O., and Gärtner K. J. Future Gener. Comput. Syst. 20 3 (2004) 475
19. Klein O., and Philip P. J. Crystal Growth 249 3-4 (2003) 514
20. Pons M., Blanquet E., Dedulle J.M., Garcon I., Madar R., and Bernard C. J. Electrochem. Soc. 143 11 (1996) 3727