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Volumn 27, Issue 1, 2007, Pages 1-5

Preparation of CeO2 nanoparticles and their chemical mechanical polishing as abrasives

Author keywords

Abrasive size; Chemical mechanical polishing; GaAs; Nanometer CeO2

Indexed keywords

ABRASIVES; CERIUM COMPOUNDS; MODELS; NANOPARTICLES; POWDERS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

EID: 34047227856     PISSN: 10040595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (18)

References (11)
  • 3
    • 6944224016 scopus 로고    scopus 로고
    • Study on ultra-precision polishing of silicon wafer by nanosized abrasives
    • Chen Y, Chen J Q, Chen Z G, et al. Study on ultra-precision polishing of silicon wafer by nanosized abrasives[J]. Tribology, 2004, 24(4): 332-335.
    • (2004) Tribology , vol.24 , Issue.4 , pp. 332-335
    • Chen, Y.1    Chen, J.Q.2    Chen, Z.G.3
  • 4
    • 34047218575 scopus 로고    scopus 로고
    • Chinese source
  • 5
    • 27844520286 scopus 로고    scopus 로고
    • Study on abrasive effect in copper chemical-mechanical polishing
    • Li X J, Jin Z J, Kang R K, et al. Study on abrasive effect in copper chemical-mechanical polishing[J]. Tribology, 2005, 25(5): 431-436.
    • (2005) Tribology , vol.25 , Issue.5 , pp. 431-436
    • Li, X.J.1    Jin, Z.J.2    Kang, R.K.3
  • 6
    • 33644945400 scopus 로고    scopus 로고
    • An investigation on the monocrystalline silicon surface damage caused by slurry erosion
    • Xu J, Luo J B. An investigation on the monocrystalline silicon surface damage caused by slurry erosion[J]. Tribology, 2006, 26(1): 7-11.
    • (2006) Tribology , vol.26 , Issue.1 , pp. 7-11
    • Xu, J.1    Luo, J.B.2
  • 8
    • 33748181339 scopus 로고    scopus 로고
    • GaAs wafer chemomechanical polishing mechanism
    • Bu J P, Zheng H J, He H J, et al. GaAs wafer chemomechanical polishing mechanism[J]. Research and Progress of SSE, 1997, 17(4): 399-402.
    • (1997) Research and Progress of SSE , vol.17 , Issue.4 , pp. 399-402
    • Bu, J.P.1    Zheng, H.J.2    He, H.J.3
  • 9
    • 0035338991 scopus 로고    scopus 로고
    • Material removal mechanism in chemical mechanical polishing: Theory and modeling
    • Luo J F, Doronfeld D A. Material removal mechanism in chemical mechanical polishing: Theory and modeling[J]. IEEE Transactions on Semiconductor Manufacturing, 2001, 14(2): 112-133.
    • (2001) IEEE Transactions on Semiconductor Manufacturing , vol.14 , Issue.2 , pp. 112-133
    • Luo, J.F.1    Doronfeld, D.A.2
  • 10
    • 34047238083 scopus 로고    scopus 로고
    • Chinese source
  • 11
    • 13844254361 scopus 로고    scopus 로고
    • A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing
    • Ping H C, Bing W H, Han C S. A chemical kinetics model to explain the abrasive size effect on chemical mechanical polishing[J]. Thin Solid Films, 2005, 476: 130-136.
    • (2005) Thin Solid Films , vol.476 , pp. 130-136
    • Ping, H.C.1    Bing, W.H.2    Han, C.S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.