Study on ultra-precision polishing of silicon wafer by nanosized abrasives

Mocaxue Xuebao/Tribology

Volumn 24, Issue 4, 2004, Pages 332-335

  Chen, Yang ^a   Chen, Jian Qing ^b   Chen, Zhi Gang ^a   Fan, Zhen ^c  

^a CHANGZHOU UNIVERSITY   (China)

^b HOHAI UNIVERSITY   (China)

^c JIANGSU UNIVERSITY   (China)

Author keywords

Nanoscale abrasive; Polishing; Single crystal Si wafer; Surface morphology

Indexed keywords

ABRASIVES; CHEMICAL MECHANICAL POLISHING; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SINGLE CRYSTALS;

NANOSCALE ABRASIVE; SINGLE CRYSTAL SILICON WAFER;

SILICON WAFERS;

EID: 6944224016     PISSN: 10040595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Chiu J B, Yu C C, Shen S H. Application of soft landing to the process control of chemical mechanical polishing[J]. Microelectronic Engineering, 2003, 65(3): 345-356.
2. Li X S. Preparation and application of rare earth polishing powder[J]. Journal of Chinese Rare Earth Society, 2002, 20(5): 392-397.
3. Zhao Q L, Liang Y C, Dong S. Investigation of the diamond tip wear of an atomic force microscope in micro-machining[J]. Tribology, 2001, 21(3): 176-181.
4. Nie S C, Zhang S W, Wang H B, et al. Advances in nanotribological applications of atomic force microscope[J]. Tribology, 1998, 18(1): 88-96.
5. Chen M J, Dong S, Li D, et al. Study on the influence factors of the surface quality in ultra-precision grinding machining of brittle materials[J]. Chinese Journal of Mechanical Engineering, 2001, 37(3): 1-4.
6. Bifao T G, Bow T A, Scattergood R, et al. Ductile-regime grinding: a new technology for machining brittle material[J]. Journal of Engineering Industry, 1991, 113: 184-189.
7. Li S H, Zhou C H, Zhang R J, et al. Role of chemistry in tribochemistry progress[J]. Tribology, 2002, 22(1): 74-79.
8. Xue Q J, Li W M. The research progress in tribochemistry[J], Progress in Chemistry, 1997, 9(3): 311-319.
9. Seok J W, Sukam C P, Kim A T. Multiscale material removal modeling of chemical mechanical polishing[J]. Wear, 2003, 254(2-3): 307-320.