Linewidth enhancement factor and chirp in quantum dot lasers

Journal of Applied Physics

Volumn 94, Issue 3, 2003, Pages 1983-1989

  Oksanen, Jani ^a   Tulkki, Jukka ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DENSITY OF STATES; GROUND STATE; LIGHT ABSORPTION; LIGHT EMISSION; REFRACTIVE INDEX; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

LINEWIDTH ENHANCEMENT FACTOR (LEF);

SEMICONDUCTOR LASERS;

EID: 0042010174     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1591059     Document Type: Article

References (24)

1. P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, IEEE J. Sel. Top. Quantum Electron. 6, 544 (2000).
2. K. Kim, J. Urayama, and T. B. Norris, Appl. Phys. Lett. 81, 670 (2002).
3. M. Braskén, M. Lindberg, M. Sopanen, H. Lipsanen, and J. Tulkki, Phys. Rev. B 58, R15 993 (1998).
4. H. Saito, K. Nishi, A. Kamei, and S. Sugou, IEEE Photonics Technol. Lett. 12, 1298 (2000).
5. G. Park, O. Shchekin, D. Huffaker, and D. Deppe, IEEE Photonics Technol. Lett. 13, 230 (2000).
6. T. Newell, D. Bessert, A. Stintz, B. Fuchs, K. Malloy, and L. Lester, IEEE Photonics Technol. Lett. 11, 1527 (1999).
7. D. Huffaker and D. Deppe, Appl. Phys. Lett. 73, 520 (1998).
8. Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982).
9. M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. 22, 1915 (1986).
10. K. J. Vahala, IEEE J. Quantum Electron. 24, 523 (1988).
11. M. Grundmann and D. Bimberg, Jpn. J. Appl. Phys., Part 1 36, 4181 (1997).
12. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Z. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, IEEE J. Sci. Top. Quantum Electron. 3, 196 (1997).
13. H. C. Schneider, W. W. Chow, and S. W. Koch, Phys. Rev. B 66, 041310 (2002).
14. M. Asada, IEEE J. Quantum Electron. 25, 2019 (1989).
15. M. Yamada, S. Ogita, M. Yamagishi, and K. Tabata, IEEE J. Quantum Electron. 21, 640 (1985).
16. P. Bhattacharya, Semiconductor Optoelectronic Devices, 2nd ed. (Prentice-Hall, Englewood Clifts, NJ, 1997).
17. L. Asryan, M. Grundmann, N. Ledentsov, O. Stier, R. Suris, and D. Bimberg, J. Appl. Phys. 90, 1666 (2001).
18. A. Heinämäki and J. Tulkki, J. Appl. Phys. 81, 3268 (1997).
19. L. Lester, A. Stintz, H. Li, T. Newell, E. Pease, B. Fuchs, and K. Malloy, IEEE Photonics Technol. Lett. 11, 931 (1999).
20. M.-H. Mao, F. Heinrichsdorff, and D. Bimberg, in 11th International Conference on Indium Phosphide and Related Materials (Davos, Switzerland, 1999), pp. 569-571.
21. Y. Huang, S. Aral, and K. Komori, IEEE Photonics Technol. Lett. 5, 142 (1993).
22. L. D. Westbrook and M. J. Adams, Proc. IEEE 135, 223 (1988).
23. M. Braskén, M. Lindberg, D. Sundholm, and J. Olsen, Phys. Rev. B 61, 7652 (2000).
24. H. Lipsanen, M. Sopanen, and J. Ahopelto, Phys. Rev. B 51, 13 868 (1995) ; similar results have been obtained for InGaAs/GaAs pyramid structures.