Molecular beam epitaxial growth of indium antimonide and its characterization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 1, 2007, Pages 11-16

  Pham, H T ^a   Yoon, S F ^b   Boning, D ^a,c   Wicaksono, S ^b  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FLUX RATIO; INDIUM ANTIMONIDE; MOLECULAR BEAM EPITAXIAL GROWTH; OXIDE DESORPTION;

ENERGY GAP; GROWTH (MATERIALS); GROWTH TEMPERATURE; INFRARED DEVICES; MELTING POINT; MOLECULAR BEAM EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34047131336     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2402143     Document Type: Article

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