Non-equilibrium InSb/InAlSb diodes grown by MBE

Materials Research Society Symposium - Proceedings

Volumn 484, Issue , 1997, Pages 143-152

  Johnson, A D ^a   Smout, A B J ^a   Cairns, J W ^a   Pryce, G J ^a   Pidduck, A J ^a   Jefferies, R ^a   Ashley, T ^a   Elliott, C T ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; HETEROJUNCTIONS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS;

DOPANT ACTIVATION; LOWER REVERSE BIAS LEAKAGE CURRENT; LOWER TRAP DENSITY; MID-INFRARED LIGHT EMITTING DIODE; NEGATIVE LUMINESCENT SOURCE; NON EQUILIBRIUM TRANSPORT TECHNIQUE;

SEMICONDUCTOR DIODES;

EID: 0031380139     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)