High-mobility electron systems in remotely-doped InSb quantum wells

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 753-756

  Goldammer, K J ^a   Chung, S J ^a   Liu, W K ^a   Santos, M B ^a   Hicks, J L ^a   Raymond, S ^a   Murphy, S Q ^a  

^a UNIVERSITY OF OKLAHOMA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; HALL EFFECT; MAGNETORESISTANCE; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

HIGH ELECTRON MOBILITY SYSTEMS; LANDAU-LEVEL FILLING FACTORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032673271     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01526-7     Document Type: Article

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