Improved performance from InAlSb/InSb superlattice mid-infrared diode lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4646, Issue , 2002, Pages 648-652

  Ashley, T ^a   Adams, A R ^b   Blood, P ^c   Andreev, A D ^b   Burke, T M ^a   O'Reilly, E P ^b   Pryce, G J ^a  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

InAlSb; InSb; Laser diodes; MBE; Mid infrared; Superlattice

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; INFRARED DEVICES; LASER BEAM EFFECTS; LASER PULSES; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; OPTICAL RESOLVING POWER; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

AUGER LOSSES; INTERVALENCE ABSORPTION EFFECTS; MID INFRARED DIODE LASERS; MID INFRARED EMITTERS; SEMICONDUCTING INDIUM ALUMINUM ANTIMONY; SEMICONDUCTING INDIUM ANTIMONY;

SEMICONDUCTOR LASERS;

EID: 0036028771     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.470572     Document Type: Article

References (4)

1. ASHLEY, T., ELLIOTT, C.T., GORDON, N.T., HALL, R.S., JOHNSON, A.D., and PRYCE, G.J.: 'Room temperature narrow gap semiconductor diodes as sources and detectors in the 5-10□m wavelength region', J. Cryst. Growth 159, 1100 (1996).
2. ASHLEY, T., BESWICK, J., ELLIOTT, C.T., JEFFERIES, R., JOHNSON, A.D., and PRYCE, G.J.: 'Mid-infrared InSb and InAlSb diode lasers', IEE Proc.-Optoelectron., Vol. 145, October 1998.
3. ASHLEY, T., 'Type-I INSb-based mid-infrared diode lasers', Phil. Trans. R. Sol. Lond. A vol 339, pp 475-488, 2001.
4. ANDREEV, A.D., O'REILLY, E.P., ADAMS, A.R. and ASHLEY, T., 'Theoretical performance and structure optimization of 3.5-4.5μm InGaSb/InGaAlSb multiple-quantum-well lasers', Appl. Phys. Lett., vol 78, pp 2640-2, 2001.