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Volumn 159, Issue 1-4, 1996, Pages 1100-1103
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Room temperature narrow gap semiconductor diodes as sources and detectors in the 5-10 μm wavelength region
a a a a a a
a
DRA
(United Kingdom)
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTROLUMINESCENCE;
HETEROJUNCTIONS;
INFRARED DETECTORS;
LIGHT EMITTING DIODES;
LIGHT SOURCES;
METALLORGANIC VAPOR PHASE EPITAXY;
MOLECULAR BEAM EPITAXY;
NEGATIVE RESISTANCE;
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
AUGER GENERATION;
NARROW GAP SEMICONDUCTOR DIODE;
REVERSE BIAS CARRIER EXTRACTION;
ROOM TEMPERATURE;
THERMAL EQUILIBRIUM EMISSION SUPPRESSION;
SEMICONDUCTOR DIODES;
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EID: 0030562516
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00683-4 Document Type: Article |
Times cited : (29)
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References (13)
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