Influence of N 2 :(N 2 + Ar) flow ratio and substrate temperature on the properties of zirconium nitride films prepared by reactive dc magnetron sputtering

Applied Surface Science

Volumn 220, Issue 1-4, 2003, Pages 367-371

  Hu, Lili ^a   Li, Dejie ^a   Fang, Guojia ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Electrical resistivity; Nitride; Preferred orientation; Reactive dc sputtering; Zirconium

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING;

SUBSTRATE TEMPERATURE;

ZIRCONIUM COMPOUNDS;

EID: 0142155136     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00843-2     Document Type: Article

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