Property change in ZrNxOy thin films: Effect of the oxygen fraction and bias voltage

Thin Solid Films

Volumn 469-470, Issue SPEC. ISS., 2004, Pages 11-17

  Vaz, F ^a   Carvalho, P ^a   Cunha, L ^a   Rebouta, L ^a   Moura, C ^a   Alves, E ^b   Ramos, A R ^b   Cavaleiro, A ^c   Goudeau, Ph ^d   Riviere J P ^d  

^a UNIVERSITY OF MINHO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSITY OF COIMBRA   (Portugal)

^d Lab de Metallurgie Physique   (France)

Author keywords

Bias voltage; Oxygen fraction; ZrNxOy

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; ELECTRIC POTENTIAL; HARDNESS TESTING; MAGNETRON SPUTTERING; MICROHARDNESS; OXYGEN; SCANNING ELECTRON MICROSCOPY; SOLAR COLLECTORS; SUBSTRATES; SURFACE ROUGHNESS; ZIRCONIUM COMPOUNDS;

BIAS VOLTAGE; DEPOSITION RATE; GRAIN SIZE REDUCTION; OXYGEN FRACTION;

THIN FILMS;

EID: 10044279236     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.191     Document Type: Article

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