Oxidation of InAlAs and its application to gate insulator of InAlAs/InGaAs metal oxide semiconductor high electron mobility transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 3, 2005, Pages 1174-1180

  Paul, Narayan Chandra ^a   Nakamura, Kazuki ^a   Seto, Hiroki ^a   Iiyama, Koichi ^a   Takamiya, Saburo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Compound semiconductor; Metal oxide semiconductor; MOSHEMT; Nitridation; Oxi nitridation; Oxidation

Indexed keywords

ARSENIC COMPOUNDS; ELECTRON MOBILITY; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; NITRIDING; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

COMPOUND SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR; MOSHEMT; NITRIDATION; OXI-NITRIDATION;

MOS DEVICES;

EID: 19944423152     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1174     Document Type: Article

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