Secondary electron emission and surface potential of SiO2 film surface by negative ion bombardment

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 141, Issue 1-4, 1998, Pages 645-651

  Tsuji, Hiroshi ^a   Gotoh, Yasuhito ^a   Ishikawa, Junzo ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Negative ion bombardment; Secondary electron emission; SiO2

Indexed keywords

CARBON; CURRENT DENSITY; ELECTRON EMISSION; ION BOMBARDMENT; ION IMPLANTATION; LEAKAGE CURRENTS; RADIATION EFFECTS; SILICA; THIN FILMS;

SECONDARY ELECTRON EMISSION (SEE); SURFACE POTENTIAL;

SEMICONDUCTING FILMS;

EID: 0032068450     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00168-2     Document Type: Article

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